i ntegrated c ircuits d ivision ITC137P integrated telecom circuits www.ixysic.com ds-ITC137P-r05 1 e 3 pb applications features description approvals ordering information pin configuration ? data/fax modem ? voice mail systems ? telephone sets ? computer telephony integration ? set top box modems ? 3750v rms input/output isolation ? fcc compatible part 68 ? full-wave bridge rectifier ? darlington transistor for electronic inductor ?dry? circuits ? full wave current detector for ring signal or loop current detect ? 2mw hook switch drive power (logic compatible) ? includes zener diodes ? small 16-pin soic package (pcmcia compatible) ? board space and cost savings ? no moving parts ? jedec standard pin out ? ul recognized component: file e76270 ? csa certified component: certificate 1305490 ? en/iec 60950-1 certified component: tuv certificate: b 09 07 49410 006 parameter rating units relay load voltage 350 v relay load current 120 ma rms / ma dc relay on-resistance (max) 15 ? bridge rectifier reverse voltage 100 v darlington collector current 120 ma darlington current gain 10,000 - part # description ITC137P 16-pin soic (50/tube) ITC137Ptr 16-pin soic (1000/reel) ITC137P pv 1 2 3 4 16 15 14 13 5 6 7 8 (n/c) C led - form a relay C led - form a relay + zener diode (cathode) C zener diode (anode) + zener diode (cathode) collector - phototransistor emitter - phototransistor output form a output form a/bridge input C/+ darlington base darlington emitter bridge output +/darlington collector/ + zener diode (cathode) bridge output C/C zener diode (anode) led - phototransistor C/+ led - phototransistor +/C ** denotes full-wave detection ** 12 11 10 9 this integrated telecom circuit combines a single-pole, normally open (1-form-a) solid state relay, a bridge rectifier, a darlington transistor, an optocoupler, and three zener diodes into one 16-pin soic package, consolidating designs and reducing component count in telecom applications. the itc137?s optocoupler provides for full-wave detection of ringing signals. switching characteristics of normally open devices form-a i f i load 10% 90% t on t off
i ntegrated c ircuits d ivision www.ixysic.com 2 r05 ITC137P absolute maximum ratings @ 25oc electrical characteristics @ 25oc total power dissipation (pd): p d =p hookswitch + p bridge + p darlington + p led p d =(r ds (on)) (i 2 l ) + 2(v f )(i l ) + (v ce )(i l ) + (v led )(i f ) where: r ds (on) = maximum relay on resistance i l = maximum loop current v f = maximum diode forward voltage v ce = maximum voltage collector to emitter v led = maximum led forward voltage i f = maximum led current parameter ratings units input control current, relay 50 ma input control current, detector 100 ma total package dissipation 1 1w isolation voltage, input to output 3750 v rms operational temperature -40 to +85 c storage temperature -40 to +125 c 1 derate linearly 8.33 mw / oc parameter conditions symbol min typ max units output characteristics blocking voltage (peak) - v l - - 350 v p load current continuous - i l - - 120 ma rms / ma dc peak t=10ms i lpk - - 400 ma p on-resistance i l =120ma r on --15 ? off-state leakage current v l =350v, t j =25oc i leak --1 ? a switching speeds turn-on i f =5ma, v l =10v t on --3 ms turn-off t off --3 ms output capacitance v l =50v, f=1mhz c out -25 - pf input characteristics input control current to activate i l =120ma i f --5 ma input voltage drop i f =5ma v f 0.9 1.2 1.4 v reverse input voltage - v r --5 v reverse input current v r =5v i r --10 ? a electrical characteristics @25oc: darlington transistor section parameter conditions symbol min typ max units collector-emitter voltage i c =10ma dc , i b =0ma v ceo 40 - - v collector current, continuous v c =3.5v i c - - 120 ma power dissipation - p d - - 500 mw off-state collector-emitter leakage current v ce =10v, i b =0ma i cex --1 ? a dc current gain v ce =10v dc , i c =120ma h fe 10,000 - - - saturation voltage i c =120ma v ce(sat) - - 1.5 v total harmonic distortion i c =40ma, f o =300hz @ -10dbm - - - -80 db absolute maximum ratings are stress ratings. stresses in excess of these ratings can cause permanent damage to the device. functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied.
i ntegrated c ircuits d ivision ITC137P www.ixysic.com 3 r05 example circuit parameter conditions symbol min typ max units output characteristics phototransistor blocking voltage i c =10 ? abv ceo 20 50 - v phototransistor dark current v ce =5v, i f =0ma i ceo - 50 500 na saturation voltage i f =16ma , i c =2ma v sat - 0.3 0.5 v current transfer ratio i f =6ma, v ce =0.5v ctr 33 400 - % input characteristics input control current i c =2ma, v ce =0.5v i f -26ma input voltage drop i f =5ma v f 0.9 1.2 1.4 v input current (detector must be off) i c =1 ? a, v ce =5v i f 525 - ? a electrical characteristics @25oc: detector section parameter conditions symbol min typ max units reverse voltage - v rd - - 100 v forward voltage drop i fd =120ma v fd - - 1.5 v reverse leakage current t j =25oc, v r =100v i rd --10 ? a t j =85oc - - 50 forward current continuous - i fd - - 140 ma peak t=10ms - - 500 electrical characteristics @25oc (unless otherwise noted): bridge rectifier section mosfet driver circuit 4 1 3 2 7 8 6 5 16 15 14 13 12 11 10 9 digital ground isolated ground cpu ring off-hook 680 v cc 15v 4.7f + 4.7f + 51k 15 10f 25k coupling transformer r l 10 300v surge protection telephone line ring 18vx 2 0.47f 250v 8.2k v cc tip a b a b parameter conditions symbol min typ max units zener voltage between pins 4&5 and pins 6&5 i zt =20ma v z - 4.3 - v zener voltage between pins 12&11 i zt =20ma v z -15 -v input to output capacitance - c i/o -3 -pf input to output isolation - v i/o 3750 - - v rms electrical characteristics @25oc: zener diodes
i ntegrated c ircuits d ivision www.ixysic.com 4 r05 ITC137P * the performance data shown in the graphs above is typical of device performance. for guaranteed parameters not indicated in the written specifications, please contact our application department. device performance data* relay performance data* typical led forward voltage drop (n=50, i f =5ma, t a =25oc) 35 30 25 20 15 10 5 0 1.17 1.19 1.21 1.23 1.25 led forward voltage drop (v) device count (n) typical led forward voltage drop vs. temperature temperature (oc) led forward voltage drop (v) 1.8 1.6 1.4 1.2 1.0 0.8 -40 -20 0 20 40 60 80 120 100 i f =50ma i f =30ma i f =20ma i f =10ma i f =5ma package power derating temperature (oc) power dissipation (w) 25 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 30 35 40 45 50 55 60 65 70 75 80 85 operating area typical turn-on time (n=50, i f =2ma, i l =120ma dc , t a =25oc) 0.88 1.58 2.28 2.98 1.23 1.93 2.63 turn-on time (ms) device count (n) 25 20 15 10 5 0 typical turn-off time (n=50, i f =2ma, i l =120ma dc , t a =25oc) 0.06 0.14 0.22 0.30 0.26 0.18 0.10 turn-off time (ms) device count (n) 25 20 15 10 5 0 typical on-resistance distribution (n=50, i l =120ma dc , t a =25oc) 35 30 25 20 15 10 5 0 9.25 10.25 8.75 9.75 10.75 on-resistance ( : ) device count (n) typical i f for switch operation (n=50, i l =120ma dc , t a =25oc) 0.42 0.66 0.90 0.30 0.54 0.78 1.02 led current (ma) device count (n) 25 20 15 10 5 0 typical i f for switch dropout (n=50, i l =120ma dc , t a =25oc) 25 20 15 10 5 0 0.30 0.54 0.78 0.18 0.42 0.66 0.90 led current (ma) device count (n) typical blocking voltage distribution (n=50, t a =25oc) 35 30 25 20 15 10 5 0 365 385 405 425 375 395 415 blocking voltage (v p ) device count (n)
i ntegrated c ircuits d ivision ITC137P www.ixysic.com 5 r05 *the performance data shown in the graphs above is typical of device performance. for guaranteed parameters not indicated in t he written specifications, please contact our application department. relay performance data (cont)* typical turn-on time vs. led forward current (i l =120ma dc ) led forward current (ma) turn-on time (ms) 0 5 1015202530354045 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50 typical turn-off time vs led forward current (i l =120ma dc ) led forward current (ma) turn-off time (ms) 0 5 1015202530354045 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 50 typical on-resistance vs. temperature (i f =5ma, i l =120ma dc ) temperature (oc) on-resistance ( : ) -40 60 50 40 30 20 10 0 -20 0 20 40 60 80 100 typical turn-on time vs. temperature (i l =120ma dc ) temperature (oc) turn-on time (ms) -40 3.0 2.5 2.0 1.5 1.0 0.5 0 -20 0 20 40 60 80 100 i f =5ma i f =10ma i f =20ma typical turn-off time vs. temperature (i f =5ma, i l =120ma dc ) temperature (oc) turn-off time (ms) -40 0.30 0.25 0.20 0.15 0.10 0.05 0 -20 0 20 40 60 80 100 load current vs. ambient temperature (i f =5ma) temperature (oc) percent maximum load rating (%) -40 100 75 50 25 0 025 50 85 typical i f for switch operation vs. temperature (i l =120ma dc ) temperature (oc) led current (ma) -40 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -20 0 20 40 60 80 100 typical i f for switch dropout vs. temperature (i l =120ma dc ) temperature (oc) led current (ma) -40 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -20 0 20 40 60 80 100 load current vs. load voltage (i f =5ma, t a =25oc) load voltage (v) load current (ma) 200 150 100 50 0 -50 -100 -150 -200 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 2.0 1.5 typical blocking voltage vs. temperature temperature (oc) blocking voltage (v p ) -40 415 410 405 400 395 390 385 380 -20 0 20 40 60 80 100 typical leakage vs. temperature measured across pins 15&16 temperature (oc) leakage ( p a) -40 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 -20 0 20 40 60 80 100 energy rating curve time load current (a) 10 p s 1.2 1.0 0.8 0.6 0.4 0.2 0 1ms 100 p s 100ms 1s 10ms 10s 100s
i ntegrated c ircuits d ivision www.ixysic.com 6 r05 ITC137P * the performance data shown in the graphs above is typical of device performance. for guaranteed parameters not indicated in the written specifications, please contact our application department. phototransistor performance data* darlington performance data* 0 0 8 4 16 12 24 20 28 123456 78 910 i f =1ma i f =10ma i f =5ma i f =2ma typical transfer characteristics of single transistor detector collector emitter voltage collector current (ma) single transistor typical normalized ctr vs. temperature (v ce =0.5v) temperature (oc) normalized ctr (%) 8 7 6 5 4 3 2 1 0 -40 -20 0 20 40 60 80 120 100 i f =1ma i f =2ma i f =5ma i f =10ma i f =15ma i f =20ma single transistor typical normalized ctr vs. i f (v ce =0.5v) forward current (ma) normalized ctr (%) 0 24681012141618 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 20 single transistor typical i c vs. i f (v ce =0.5v) forward current (ma) collector current (ma) 0 2468 12 10 14 16 18 20 12 10 8 6 4 2 0 darlington transistor typical i c vs. i f (v ce =0.5v) forward current (ma) collector current (ma) 0 2468 12 10 14 16 18 20 16 14 12 10 8 6 4 2 0 darlington transistor typical normalized ctr vs. i f (v ce =0.8v) forward current (ma) normalized ctr (%) 0 24681012141618 2.5 2.0 1.5 1.0 0.5 0 20 darlington transistor typical normalized ctr vs. temperature (v ce =0.8v) temperature (oc) normalized ctr (%) -40 3.0 2.5 2.0 1.5 1.0 0.5 0 -20 0 20 40 60 80 100 i f =1ma i f =2ma i f =5ma i f =10ma i f =15ma i f =20ma typical transfer characteristics of darlington transistor collector emitter voltage collector current (ma) 0246810 20 40 60 80 100 120 i b =2 p a i b =4 p a i b =6 p a i b =8 p a i b =10 p a v-i characteristics for test circuit i out (ma) v in (volts) 20 10 9 8 7 6 5 4 40 60 80 100 120
i ntegrated c ircuits d ivision ITC137P www.ixysic.com 7 r05 manufacturing information moisture sensitivity all plastic encapsulated semiconductor packages are susceptible to moisture ingression. ixys integrated circuits division classified all of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, ipc/jedec j-std-020 , in force at the time of product evaluation. we test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. this product carries a moisture sensitivity level (msl) rating as shown below, and should be handled according to the requirements of the latest version of the joint industry standard ipc/jedec j-std-033 . device moisture sensitivity level (msl) rating ITC137P msl 1 esd sensitivity this product is esd sensitive , and should be handled according to the industry standard jesd-625 . reflow profile this product has a maximum body temperature and time rating as shown below. all other guidelines of j-std-020 must be observed. device maximum temperature x time ITC137P 260oc for 30 seconds board wash ixys integrated circuits division recommends the use of no-clean flux formulations. however, board washing to remove flux residue is acceptable. since ixys integrated circuits division employs the use of silicone coating as an optical waveguide in many of its optically isolated products, the use of a short drying bake could be necessary if a wash is used after solder reflow processes. chlorine- or fluorine-based solvents or fluxes should not be used. cleaning methods that employ ultrasonic energy should not be used. e 3 pb
i ntegrated c ircuits d ivision specification: ds-ITC137P-r05 ? copyright 2012, ixys integrated circuits division all rights reserved. printed in usa. 12/19/2012 for additional information please visit our website at: www.ixysic.com 8 ITC137P ixys integrated circuits division makes no representations or warranties with respect to the accuracy or completeness of the co ntents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. neither circuit patent licenses nor indemnity a re expressed or implied. except as set forth in ixys integrated circuits division?s standard terms and conditions of sale, ixys integrated circuits division assumes no liability whatsoever, a nd disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infri ngement of any intellectual property right. the products described in this document are not designed, intended, authorized or warranted for use as components in systems in tended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of ixys integrated circuits division?s product may resul t in direct physical harm, injury, or death to a person or severe property or environmental damage. ixys integrated circuits division reserves the right to discontinue or make changes to its p roducts at any time without notice. mechanical dimensions (inches) mm dimensions notes: 1. coplanarity = 0.1016 (0.004) max. 2. leadframe thickness does not include solder plating (1000 microinch maximum). 3. sum of package height, standoff, and coplanarity does not exceed 2.108 (0.083). 8.890 typ (0.350 typ) 0.406 typ (0.016 typ) 10.1600.381 (0.4000.015) 7.4930.127 (0.2950.005) 10.3630.127 (0.4080.005) 1.270 typ (0.050 typ) 0.635 x 45 (0.025 x 45) 0.254 0.0127 (0.0100.0005) 1.016 typ (0.040 typ) 0.5080.1016 (0.0200.004) pin 1 pin 16 2.108 max (0.083 max) see note 3 min: 0.0254 (0.001) max: 0.102 (0.004) lead to package standoff: 1.90 (0.075) 1.27 (0.050) 9.30 (0.366) 0.60 (0.024) pcb land pattern dimensions mm (inches) embossment embossed carrier top cover tape thickness 0.102 max. (0.004 max.) 330.2 dia. (13.00 dia.) k 0 =3.20 (0.126) k 1 =2.70 (0.106) a 0 =10.90 (0.429) w=16 (0.630) b 0 =10.70 (0.421) p=12.00 (0.472) notes: 1. all dimensions carry tolerances of eia standard 481-2 2. the tape complies with all notes for constant dimensions listed on page 5 of eia-481-2 itc117p itc117ptr tape & reel
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